The global RF GaN market is witnessing constant revenue growth. Factors such as the surging demand from military and space and greater stability in radiation surroundings possessed by GaN devices foster the market demand. Also, rising usages of RF GaN (Radio-frequency Gallium Nitride) devices in various industries such as telecommunications, consumer electronics, and medical escalate the market growth to furthered height.

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Global RF GaN Market – Competitive Landscape

Highly competitive, the Radiofrequency Gallium Nitride market appears fragmented, with several well-established players forming a competitive landscape. Payers adopt strategies such as collaborations, mergers & acquisitions, and innovations to gain a larger competitive share. They make substantial investments in developing low-cost, compact components, emphasizing improved aftersales services to end-users.

Major Players:

Players leading the RF GaN include ROHM Semiconductors (Japan), Aethercomm Inc. (US), Analog Devices Inc. (US), STMicroelectronics NV (Switzerland), NXP Semiconductors NV (Netherlands), Toshiba Corporation (Japan), and Cree Inc. (US), among others.

With the spurring rise in automotive, aerospace, ICT, telecommunication, healthcare, and consumer electronics industries, the market is estimated to gain exponential accruals in the years to come. According to Market Research Future (MRFR), the global RF GaN market is poised to garner a substantial valuation by 2027, growing at a phenomenal CAGR during the assessment period (2020-2027).

Additionally, technological advances and the augmenting demand for the extra bandwidth from the end-user of electronic devices push the growth of the market. RF GaN uses in commercial and defense satellite communications are growing rapidly. Vast uses of RF GaN in 5G networks and other aerospace & defense systems create vast opportunities.

Huge demand for wireless communication impacts the market increase positively, creating the need for energy-efficient systems. The emergence of new communication technologies and focus on improving the current GaN technology provide new opportunities to the market. However, the high manufacturing costs of these materials are major factors expected to obstruct market growth.

Global RF GaN Market - Segmentations

The report is segmented into material types, applications, and regions. The material type segment is sub-segmented into GaN-on-diamond, GaN-on-silicon, and GaN-on-SiC. The application segment is sub-segmented into aerospace, military & defense, IT & telecommunication, and others. The region segment is sub-segmented into Europe, North America, Asia Pacific, and Rest-of-the-World.

Global RF GaN Market - Geographical Analysis

The Asia Pacific region dominates the global Radiofrequency Gallium Nitride market, heading with the launch of 5G networks and adoption in electric vehicles. Besides, rapid economic growth in China, India, and Japan drives the market demand. Huge market for energy-efficient electronics and technological advances in RF components boost the RF GaN market size.

Additionally, the rising demand from military, offshore oil & gas exploration and emergency medical service providers substantiate the region’s RF GaN market share. The strong presence of well-developed players and aerospace sectors push the RF GaN Industry in the region.

Among other APAC countries, India is increasingly becoming a hub for technology, automotive, and aerospace developments, with a steady flow from foreign investors. Furthermore, the raw material advantages and the availability of a cost-competitive labor force substantiate the RF GaN industry in the region.

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Industry/Innovation/Related News:

July 14, 2021 --- Teledyne e2v HiRel Electronics, a leading global provider of high-reliability semiconductor solutions, announced its partnership with Integra Technologies Inc. to launch 100V GaN/SiC RF power technology for high-reliability aerospace & defense applications. Teledyne would be offering high reliability qualified versions of Integra’s new 100V Gallium Nitride on Silicon Carbide (GaN/SiC) power transistors.

The addition of the new screening and qualified devices would assure long operational life in even the harshest environments. Integra’s newly launched 100V RF GaN/SiC gives designers the ability to dramatically increase system power levels and functionality while simplifying system architectures with less power combining circuitry.