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Ferroelectric Random Access Memory Market Size, Share, Trends, Business Strategies, Revenue, Leading Players, Opportunities and Forecast 2027

Industry Insight

According to the latest report, the global FRAM market size is estimated to reach USD 343.2 million with a 3.78% CAGR during the forecast period 2018-2027.

Ferroelectric Random Access Memory (FRAM) is a combination of fast read and write access of dynamic RAM (DRAM) that uses ferroelectric film for working. It performs well at low voltages and is not sensitive to environmental changes due to its low switching energy. Due to its non-volatility and low power consumption, FRAM becomes ideal to use in various applications. This memory requires a very little amount of energy for polarization than other technologies. FRAM with its transit cards, power meters, and gaming systems proved its capability in the market to scale cost efficiency. This FRAM recording technology is adopted by various industries like Automotive, Telecommunication, and IT.

As FRAM devices are sensitive and reactive to slight changes in electrical voltage, these are used as alternatives to memory recording devices. These FRAM recording memory devices can store more data and information using less energy which leads to real economic savings. These memory recording devices are widely used in the automotive and electronics industry. Increasing uses of highly scalable memory devices and growing demand for connected & wearable devices is rapidly expanding the market growth. Rising usage of FRAM as an alternative to electrically erasable programmable read-only memory (EEPROM) for preventing the loss of data. It has expeditious write performance over flash memory which makes it ideal to use as an efficient alternative to electrically volatile memory.

The FRAM market opportunities are FRAM can run data logging applications at less power cost is expected to enhance the market growth in the review period.

Top Market Players

The top market players of the global FRAM market are listed as Rohm Co., Ltd (Japan), Fujitsu Ltd (Japan), Cypress Semiconductor Corp (US), Texas Instruments (US), and more.

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Growing demand for FRAM in automotive applications has also been an essential factor influencing the global FRAM market's growth journey. In fact, the availability of substitutes is also anticipated to challenge market growth during the assessment period. Further, the emergence of new FRAM designs using the CMOS process is likely to act as a prospect for the global FRAM market during the forecast period, especially post lockdown for the COVID-19 outbreak.

Some renowned companies such as Cypress Semiconductor Corporation announced a new family of serial nonvolatile memories as ExcelonTM Ferroelectric Random-Access Memory. It features high-speed, nonvolatile data logging that prevents data loss even in harsh automotive and industrial environments, as well as extreme temperatures. In the same line, Fujitsu also announced the release of the 8Mbit ReRAM MB85AS8MT. It has the world's most significant density as a mass-produced ReRAM product. It is optimal for battery-operated small wearable devices such as hearing aids, Smartwatches, and smart bands.

Segmentation of Market

The global Ferroelectric Random Access Memory Market Demand has further been segmented along the following lines:

Depending on product type, the market has included 4K, 16K, 6.18K, 32K, 64K, 128K, 256K, 512K, and more (1M, 2M,4M). Among these, the 256K segment acquired for the second-largest share. The 4K type is a FRAM that is manufactured by using the ferroelectric process and silicon gate complementary metal-oxide-semiconductor (CMOS) process technologies for forming the nonvolatile memory cells. The 8K FRAM is a built-in nonvolatile memory with a fast write feature and low power consumption. The 16K type is a FRAM that is manufactured using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. The 128K is a FRAM chip that is manufactured using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells.

In terms of interface segment, the market has included serial and parallel.

In terms of the application segment, the market has included enterprise storage, metering/measurement, factory automation, automotive, medical, telecommunication, and more.

Regional Front

North America, Asia-Pacific, Europe, and the Middle East and Africa and Central & South America are the regions involved in the study of the global FRAM market.

Asia-Pacific is anticipated to lead the FRAM Market during the assessment period. China has been a significant country for the supply of FRAM modules in terms of manufacturing that are used in consumer electronic devices. Back in 2018, Asia-Pacific also leads the global market by value USD 114.5 million. It is now expected to record a CAGR of 3.11% during the foretell period.

Further, the market in North America also posed to be the fastest-growing at the highest CAGR during the review period.

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